FDC6506P

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

1.8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

700mW

Rds On (Max) @ Id, Vgs :

170 mOhm @ 1.8A, 10V

Series :

PowerTrench®

Supplier Device Package :

SuperSOT™-6

Vgs(th) (Max) @ Id :

3V @ 250µA