FDFMA2P029Z

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

3.1A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-VDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

1.4W (Tj)

Rds On (Max) @ Id, Vgs :

95 mOhm @ 3.1A, 4.5V

Series :

PowerTrench®

Supplier Device Package :

6-MicroFET (2x2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA