FDG361N

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

600mA (Ta)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

420mW (Ta)

Rds On (Max) @ Id, Vgs :

500 mOhm @ 600mA, 10V

Series :

PowerTrench®

Supplier Device Package :

SC-70-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA