FDG6304P-F169

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

410mA (Ta)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

-

Part Status :

Last Time Buy

Power - Max :

300mW

Rds On (Max) @ Id, Vgs :

1.1 Ohm @ 410mA, 4.5V

Series :

-

Supplier Device Package :

SC-88/SC70-6/SOT-363

Vgs(th) (Max) @ Id :

1.5V @ 250µA