FDG6335N

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

700mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

113pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

300mW

Rds On (Max) @ Id, Vgs :

300 mOhm @ 700mA, 4.5V

Series :

PowerTrench®

Supplier Device Package :

SC-70-6

Vgs(th) (Max) @ Id :

1.5V @ 250µA