FDMB2308PZ

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

-

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3030pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

800mW

Rds On (Max) @ Id, Vgs :

36 mOhm @ 5.7A, 4.5V

Series :

PowerTrench®

Supplier Device Package :

6-MLP (2x3)

Vgs(th) (Max) @ Id :

1.5V @ 250µA