FDMC15N06

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

2.4A (Ta), 15A (Tc)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

2.3W (Ta), 35W (Tc)

Rds On (Max) @ Id, Vgs :

900 mOhm @ 15A, 10V

Series :

-

Supplier Device Package :

8-MLP (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA