FDMC4435BZ

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

8.5A (Ta), 18A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2045pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

2.3W (Ta), 31W (Tc)

Rds On (Max) @ Id, Vgs :

20 mOhm @ 8.5A, 10V

Series :

PowerTrench®

Supplier Device Package :

8-MLP (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

3V @ 250µA