FDME1023PZT

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

2.6A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFDFN Exposed Pad

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

600mW

Rds On (Max) @ Id, Vgs :

142 mOhm @ 2.3A, 4.5V

Series :

PowerTrench®

Supplier Device Package :

6-MicroFET (1.6x1.6)

Vgs(th) (Max) @ Id :

1V @ 250µA