FDMJ1028N

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

3.2A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WFDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

800mW

Rds On (Max) @ Id, Vgs :

90 mOhm @ 3.2A, 4.5V

Series :

PowerTrench®

Supplier Device Package :

6-MicroFET (2x2)

Vgs(th) (Max) @ Id :

1.5V @ 250µA