FDS8960C

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

7A, 5A

Drain to Source Voltage (Vdss) :

35V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

900mW

Rds On (Max) @ Id, Vgs :

24 mOhm @ 7A, 10V

Series :

PowerTrench®

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

3V @ 250µA