FGD3N60UNDF

производитель :

ON Semiconductor

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

6A

Current - Collector Pulsed (Icm) :

9A

Gate Charge :

1.6nC

IGBT Type :

NPT

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

60W

Reverse Recovery Time (trr) :

21ns

Series :

-

Supplier Device Package :

TO-252, (D-Pak)

Switching Energy :

52µJ (on), 30µJ (off)

Td (on/off) @ 25°C :

5.5ns/22ns

Test Condition :

400V, 3A, 10 Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.52V @ 15V, 3A

Voltage - Collector Emitter Breakdown (Max) :

600V