FJV3111RMTF

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно предвзятые

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

200mW

Resistor - Base (R1) :

22 kOhms

Resistor - Emitter Base (R2) :

-

Series :

-

Supplier Device Package :

SOT-23-3 (TO-236)

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

40V