FPN530

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 2V

Frequency - Transition :

150MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

1W

Series :

-

Supplier Device Package :

TO-226

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30V