FQA33N10L

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

36A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

163W (Tc)

Rds On (Max) @ Id, Vgs :

52 mOhm @ 18A, 10V

Series :

QFET®

Supplier Device Package :

TO-3P

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA