HGT1S7N60A4DS

производитель :

ON Semiconductor

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

34A

Current - Collector Pulsed (Icm) :

56A

Gate Charge :

37nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Part Status :

Obsolete

Power - Max :

125W

Reverse Recovery Time (trr) :

34ns

Series :

-

Supplier Device Package :

TO-263AB

Switching Energy :

55µJ (on), 60µJ (off)

Td (on/off) @ 25°C :

11ns/100ns

Test Condition :

390V, 7A, 25 Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 7A

Voltage - Collector Emitter Breakdown (Max) :

600V