HGTD7N60C3S9A

производитель :

ON Semiconductor

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

14A

Current - Collector Pulsed (Icm) :

56A

Gate Charge :

23nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

60W

Reverse Recovery Time (trr) :

-

Series :

-

Supplier Device Package :

TO-252AA

Switching Energy :

165µJ (on), 600µJ (off)

Td (on/off) @ 25°C :

-

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 7A

Voltage - Collector Emitter Breakdown (Max) :

600V