IRLW610ATM

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

3.3A (Tc)

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

3.1W (Ta), 33W (Tc)

Rds On (Max) @ Id, Vgs :

1.5 Ohm @ 1.65A, 5V

Series :

-

Supplier Device Package :

I2PAK (TO-262)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA