KSB811OTA

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 100mA, 1V

Frequency - Transition :

110MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Short Body

Packaging :

Tape & Box (TB)

Part Status :

Obsolete

Power - Max :

350mW

Series :

-

Supplier Device Package :

TO-92S

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

25V