KSD2012YYDTU

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA, 5V

Frequency - Transition :

3MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack, Formed Leads

Packaging :

Tube

Part Status :

Obsolete

Power - Max :

25W

Series :

-

Supplier Device Package :

TO-220F-3 (Y-Forming)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

60V