MBT35200MT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

2A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1.5A, 1.5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

625mW

Series :

-

Supplier Device Package :

6-TSOP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

310mV @ 20mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

35V