MJ11016G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

30A

Current - Collector Cutoff (Max) :

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A, 5V

Frequency - Transition :

4MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-204AA, TO-3

Packaging :

Tray

Part Status :

Active

Power - Max :

200W

Series :

-

Supplier Device Package :

TO-3

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Voltage - Collector Emitter Breakdown (Max) :

120V