MJD117T4G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

2A

Current - Collector Cutoff (Max) :

20µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A, 3V

Frequency - Transition :

25MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

1.75W

Series :

-

Supplier Device Package :

DPAK

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

100V