MJD50T4

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

200µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA, 10V

Frequency - Transition :

10MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power - Max :

1.56W

Series :

-

Supplier Device Package :

DPAK

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

400V