MJE803G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

4A

Current - Collector Cutoff (Max) :

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A, 3V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-225AA, TO-126-3

Packaging :

Bulk

Part Status :

Active

Power - Max :

40W

Series :

-

Supplier Device Package :

TO-225AA

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

80V