MMBT5179

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA, 1V

Frequency - Transition :

2GHz

Gain :

15dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

5dB @ 200MHz

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

225mW

Series :

-

Supplier Device Package :

SOT-23-3 (TO-236)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V