MMBTH10-4LT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 4mA, 10V

Frequency - Transition :

800MHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

225mW

Series :

-

Supplier Device Package :

SOT-23-3 (TO-236)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

25V