MUN2212T1

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно предвзятые

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

338mW

Resistor - Base (R1) :

22 kOhms

Resistor - Emitter Base (R2) :

22 kOhms

Series :

-

Supplier Device Package :

SC-59

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V