NDB6060L

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

48A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

20 mOhm @ 24A, 10V

Series :

-

Supplier Device Package :

D²PAK (TO-263AB)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2V @ 250µA