NDS8926

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

5.5A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

900mW

Rds On (Max) @ Id, Vgs :

35 mOhm @ 5.5A, 4.5V

Series :

-

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

1V @ 250µA