NJL3281DG

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

15A

Current - Collector Cutoff (Max) :

50µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 5A, 5V

Frequency - Transition :

30MHz

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-264-5

Packaging :

Tube

Part Status :

Active

Power - Max :

200W

Series :

-

Supplier Device Package :

TO-264

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

3V @ 1A, 10A

Voltage - Collector Emitter Breakdown (Max) :

260V