NJVBDX53C

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

8A

Current - Collector Cutoff (Max) :

500µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A, 3V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Obsolete

Power - Max :

65W

Series :

-

Supplier Device Package :

TO-220AB

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

100V