NJVMJB45H11T4G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

10A

Current - Collector Cutoff (Max) :

10µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A, 1V

Frequency - Transition :

40MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

2W

Series :

-

Supplier Device Package :

D2PAK

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Voltage - Collector Emitter Breakdown (Max) :

80V