NSS12501UW3T2G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

5A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A, 2V

Frequency - Transition :

150MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-WDFN Exposed Pad

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

875mW

Series :

-

Supplier Device Package :

3-WDFN (2x2)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

120mV @ 400mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

12V