NSS20101JT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA, 2V

Frequency - Transition :

350MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-89, SOT-490

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

300mW

Series :

-

Supplier Device Package :

SC-89-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

220mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

20V