NST857BDP6T5G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-963

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

350mW

Series :

-

Supplier Device Package :

SOT-963

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

700mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

45V