NSV60600MZ4T1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

6A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

800mW

Series :

Automotive, AEC-Q101

Supplier Device Package :

SOT-223-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

350mV @ 600mA, 6A

Voltage - Collector Emitter Breakdown (Max) :

60V