NSVBCP69T1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA, 1V

Frequency - Transition :

60MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

1.5W

Series :

-

Supplier Device Package :

SOT-223 (TO-261)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

20V