NSVMMBT6429LT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 100µA, 5V

Frequency - Transition :

700MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

300mW

Series :

-

Supplier Device Package :

SOT-23-3 (TO-236)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

45V