NTD32N06LT4G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

32A (Ta)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

1.5W (Ta), 93.75W (Tj)

Rds On (Max) @ Id, Vgs :

28 mOhm @ 16A, 5V

Series :

-

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA