NTJS4160NT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

1.8A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.75nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

300mW (Ta)

Rds On (Max) @ Id, Vgs :

60 mOhm @ 2.6A, 10V

Series :

-

Supplier Device Package :

SC-88/SC70-6/SOT-363

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 250µA