NVMFD5C650NLWFT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

21A (Ta), 111A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2546pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

3.5W (Ta), 125W (Tc)

Rds On (Max) @ Id, Vgs :

4.2 mOhm @ 20A, 10V

Series :

Automotive, AEC-Q101

Supplier Device Package :

8-DFN (5x6) Dual Flag (SO8FL-Dual)

Vgs(th) (Max) @ Id :

2.2V @ 98µA