SMMBTA13LT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

300mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA, 5V

Frequency - Transition :

125MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

225mW

Series :

-

Supplier Device Package :

SOT-23-3 (TO-236)

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30V