VN2410LZL1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

200mA (Ta)

Drain to Source Voltage (Vdss) :

240V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

350mW (Tc)

Rds On (Max) @ Id, Vgs :

10 Ohm @ 500mA, 10V

Series :

-

Supplier Device Package :

TO-92-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA