2SK4150TZ-E

производитель :

Renesas Electronics America

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

400mA (Ta)

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

750mW (Ta)

Rds On (Max) @ Id, Vgs :

5.7 Ohm @ 200mA, 4V

Series :

-

Supplier Device Package :

TO-92

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

-