NP109N055PUJ-E1B-AY

производитель :

Renesas Electronics America

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

110A (Ta)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

10350pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

1.8W (Ta), 220W (Tc)

Rds On (Max) @ Id, Vgs :

3.2 mOhm @ 55A, 10V

Series :

-

Supplier Device Package :

TO-263

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA