RJK2557DPA-00#J0

производитель :

Renesas Electronics America

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

17A (Ta)

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerWDFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

30W (Tc)

Rds On (Max) @ Id, Vgs :

128 mOhm @ 8.5A, 10V

Series :

-

Supplier Device Package :

8-WPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

-