2SB852KT146B

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

300mA

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

5000 @ 100mA, 5V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

200mW

Series :

-

Supplier Device Package :

SMT3

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 400µA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

32V