2SD2033AT114E

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

1.5A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 5V

Frequency - Transition :

80MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

HRT

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

1.8W

Series :

-

Supplier Device Package :

HRT

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

2V @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

160V