HP8S36TB

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

27A, 80A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

-

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

29W

Rds On (Max) @ Id, Vgs :

2.4 mOhm @ 32A, 10V

Series :

-

Supplier Device Package :

8-HSOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA